2N6545 PBFREE

2N6544 2N6545 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6544, 2N6545 types are Silicon NPN Triple Diffused Mesa Transistors designed for high voltage, high current, high speed switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Emitter Current Peak Emitter Current Continuous Base Current Peak Base Current Power Dissipation Power Dissipation, TC=100°C Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEV VCEX VCEO VEBO IC ICM IE IEM IB IBM PD PD TJ, Tstg ΘJC 2N6544 650 350 300 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6544 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=Rated VCEV, VBE=1.5V 0.5 ICEV VCE=Rated VCEV, VBE=1.5V, TC=100°C 2.5 ICER VCE=Rated VCEV, RBE=50Ω, TC=100°C 3.0 IEBO VEB=9.0V 1.0 BVCEX VCL=Rated VCEX, IC=4.5A, TC=100°C 350 BVCEX VCL=Rated VCEO-100V, IC=8.0A, TC=100°C 200 BVCEO IC=100mA 300 VCE(SAT) IC=5.0A, IB=1.0A 1.5 VCE(SAT) IC=8.0A, IB=2.0A 5.0 VCE(SAT) IC=5.0A, IB=1.0A, TC=100°C 2.5 VBE(SAT) IC=5.0A, IB=1.0A 1.6 VBE(SAT) IC=5.0A, IB=1.0A, TC=100°C 1.6 hFE VCE=3.0V, IC=2.5A 12 60 hFE VCE=3.0V, IC=5.0A 7.0 35 2N6545 850 450 400 9.0 8.0 16 16 32 8.0 16 125 71.5 -65 to +200 1.4 2N6545 MIN MAX 0.5 2.5 3.0 1.0 450 300 400 1.5 5.0 2.5 1.6 1.6 12 60 7.0 35 UNITS V V V V A A A A A A W W °C °C/W UNITS mA mA mA mA V V V V V V V V R1 (7-February 2011) 2N6544 2N6545 NPN SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ft VCE=10V, IC=300mA, f=1.0MHz 6.0 28 Cob VCB=10V, IE=0, f=1.0MHz 75 300 Is/b VCE=100V, t=1.0s 0.2 UNITS MHz pF A Resistive Load td VCC=250V, IC=5.0A, tr IB1=IB2=1.0A, tp=100μs, ts Duty Cycle≤2.0% tf 0.05 1.0 4.0 1.0 μs μs μs μs Inductive Load (Clamped) ts VCL=Rated VCEX, IC=5.0A, tf IB1=1.0A, VBE=5.0V, TC=100°C 4.0 0.9 μs μs ts tf VCL=Rated VCEX, IC=5.0A, IB1=1.0A, VBE=5.0V, TC=25°C 1.2 0.18 μs μs TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (7-February 2011) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)